Hall effect, n-Ge, carrier board
Article No: 11802-01
In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of nondoped semiconductors. Heatable carrier board with n-Ge-crystal, Pt100-Thermocouple, integrated heating and 4-mm-connection plugs. Dimensions of crystal (mm): 20 x 10 x 1. Spec. resistance: approx. 2.0-2.5 Ohm cm- Max. crystal temperature: 170 °C. Max. probe current: +/- 60 mA. Dimensions of circuit board (mm): 73 x 70 x 3. Weight: 0.03 kg