Intrinsic conductivity Ge, carrier board

Article No: 11807-01

In connection with Hall effect module for determination of temperature dependent conductivity of undoped semiconductors. Heatable carrier board with undoped Ge crystal and Pt100-Thermocouple Dimensions of crystal (mm): 20 x 10 x 1 Specific resistance: approx. 50 Ohm cm Max. crystal temperature: 170 °C Max. probe current: +/- 10 mA Dimensions of circuit board (mm): 73 x 70 x 39 Weight: 0,03 kg

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