Hall effect in n- and p-germanium with measureLAB

The resistivity and Hall voltage of a rectangular germanium sample are measured as a function of temperature and magnetic field. The band spacing, the specific conductivity, the type of charge carrier and the mobility of the charge carriers are determined from the measurements. Benefits Hall effect unit to control temperature, voltage, and supports intrinsic, p- and n-type Ge crystals Version with PC control and data acquisition Direct connection to PC via USB connection No extra interface necessary Magnetic field sensor can be connected directly with the Hall effect unit Tasks The Hall voltage is measured at room temperature and constant magnetic field as a function of the control current and plotted on a graph (measurement without compensation for defect voltage). The voltage across the sample is measured at room temperature and constant control current as a function of the magnetic induction B. The voltage across the sample is measured at constant control current as a function of the temperature. The band spacing of germanium is calculated from the measurements. The Hall voltage UH is measured as a function of the magnetic induction B, at room temperature. The sign of the charge carriers and the Hall constant RH together with the Hall mobility μH and the carrier concentration p are calculated from the measurements. The Hall voltage UH is measured as a function of temperature at constant magnetic induction B and the values are plotted on a graph. Learning objectives Semiconductor Band theory Forbidden zone Intrinsic conductivity Extrinsic conductivity Valence band Conduction band Lorentz force Magnetic resistance Mobility Conductivity Band spacing Hall coefficient Software included. Computer not provided.