Electricity & Magnetism / Simple Circuits, Resistors & Capacitors
Hall effect, p-Ge, carrier board
Article No.
11805-01
In connection with Halleffect-module for determination of temperature dependent Hall voltage and conductivity of doped semiconductors.
Specifications
| Dimensions of crystal (mm) | 20 x 10 x 1 |
| Spec. resistance | approx. 2.0 - 2.5 Ohm cm |
| Max. crystal temperature | 170 °C |
| Max. probe current | +/- 60 mA |
| Dimensions of circuit board (mm) | 73 x 70 x 3 |
| Weight | 0.03 kg |
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Available in the United States, 110V/60Hz adapted for direct use in U.S. labs
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